MRAM - Magnetic RAM
Manufacturer:	IBM	Speed:	10ns
Year Introduced:	1974	Frequency:
Burst Timing:		Pins:
Voltage:	0.0v	Bandwidth:
There is great interest in the possibility of fabricating a dynamic random access memory (DRAM ) which retains its memory even after removing power from the device. Such a non-volatile memory has important military applications for missiles and satellites. Clearly such a device could also have important commercial applications if the non-volatility were accomplished without impacting other properties of the memory, notably density, read and write speed, and lifetime. IBM has recently begun a project with significant funding from DARPA to study the feasibility of a DRAM memory using memory cells based on magnetic tunnel junctions.

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Last Update: 8:03 PM 1/4/02