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EDRAM (Embedded DRAM) |
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| Manufacturer: | NEC Corp. | Speed: | 15-35ns |
| Year Introduced: | 2001 | Frequency: | 450 MHz |
| Burst Timing: | Pins: | ||
| Voltage: | 1.2v | Bandwidth: | |
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EDRAM (enhanced dynamic random access memory) is dynamic random access memory (dynamic
or power-refreshed RAM) that includes a small amount of static RAM (SRAM) inside a larger
amount of DRAM so that many memory accesses will be to the faster SRAM. EDRAM is
sometimes used as L1 and L2 memory and, together with Enhanced Synchronous Dynamic DRAM,
is known as cached DRAM. Data that has been loaded into the SRAM part of the EDRAM can be accessed by the microprocessor in 15 ns (nanoseconds). If data is not in the SRAM, it can be accessed in 35 ns from the DRAM part of the EDRAM. | |||
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Last Update: 11:28 PM 12/31/01